july 2011 FDP045N10A_f102 / fdi045n10a_f102 n-channel powertr ench ? mosfet ?2011 fairchild semiconductor corporation FDP045N10A_f102 / fdi045n10a_f102 rev. a1 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter FDP045N10A_f102 fdi045n10a_f102 units v dss drain to source voltage 100 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c, silicon limited) 164* a - continuous (t c = 100 o c, silicon limited) 116 - continuous (t c = 25 o c, package limited) 120 i dm drain current - pulsed (note 1) 656 a e as single pulsed avalanche energy (note 2) 637 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 263 w - derate above 25 o c 1.75 w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 0.57 o c/w r ja thermal resistance, junction to ambient 62.5 FDP045N10A_f102 / fdi045n10a_f102 n-channel powertrench ? mosfet 100v, 164a, 4.5m features ? r ds(on) = 3.8m ( typ.)@ v gs = 10v, i d = 100a ? fast switching speed ? low gate charge ? high performance trench technology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant description this n-channel mosfet is produced using fairchild semiconductors advance powertrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? dc to dc converters ? synchronous rectification for telecommunication psu ? battery charger ? ac motor drives and uninterruptible power supplies ? off-line ups g s d to-220 g s d i 2 -pak fdi series g s d *calculated continuous current based on maximum allowable junction temperature. package limitation current is 120 a.
FDP045N10A_f102 / fdi045n10a_f102 n-channel powertr ench ? mosfet FDP045N10A_f102 / fdi045n10a_f102 rev. a1 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics device marking device package reel size tape width quant ity FDP045N10A FDP045N10A_f102 to-220 - - 50 fdi045n10a fdi045n10a_f102 i2pak - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 100 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.07 - v/ o c i dss zero gate voltage drain current v ds = 80v, v gs = 0v - - 1 a v ds = 80v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 2.0 - 4.0 v r ds(on) static drain to source on resistance v gs = 10v, i d = 100a - 3.8 4.5 m g fs forward transconductance v ds = 10v, i d = 100a (note 4) - 132 - s c iss input capacitance v ds = 50v, v gs = 0v f = 1mhz - 3960 5270 pf c oss output capacitance - 925 1230 pf c rss reverse transfer capacitance - 34 - pf c oss (er) engry releted output capacitance v ds = 50v, v gs = 0v - 1520 - pf q g(tot) total gate charge at 10v v gs = 10v, v ds = 50v i d = 100a (note 4, 5) - 57 74 nc q gs gate to source gate charge - 17 - nc q gs2 gate charge threshold to plateau - 8 - nc q gd gate to drain miller charge - 13 - nc t d(on) turn-on delay time v dd = 50v, i d = 100a v gs = 10v, r gen = 4.7 (note 4, 5) - 23 56 ns t r turn-on rise time - 26 62 ns t d(off) turn-off delay time - 50 110 ns t f turn-off fall time - 15 40 ns esr equivalent series resistance (g-s) drain open, f = 1mh z - 1.9 - i s maximum continuous drain to source diode forward curr ent - - 164* a i sm maximum pulsed drain to source diode forward current - - 656 a v sd drain to source diode forward voltage v gs = 0v, i sd = 100a - - 1.3 v t rr reverse recovery time v gs = 0v, v dd = 50v, i sd = 100a di f /dt = 100a/ s (note 4) - 75 - ns q rr reverse recovery charge - 120 - nc notes: 1. repetitive rating: pulse width limited by maximum ju nction temperature 2. l = 3mh, i as = 20.6a, r g = 25 , starting t j = 25 c 3. i sd 100a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, dual cycle 2% 5. essentially independent of operating temperature typ ical characteristics
FDP045N10A_f102 / fdi045n10a_f102 n-channel powertr ench ? mosfet FDP045N10A_f102 / fdi045n10a_f102 rev. a1 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transf er characteristics figure 3. on-resistance variation vs. figure 4. bod y diode forward voltage drain current and gate voltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 1 2 3 4 5 6 1 10 100 500 -55 o c 175 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.1 1 2 10 100 500 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 6.5v 6.0v 5.5v 5.0v 0.0 0.3 0.6 0.9 1.2 1.5 1 10 100 500 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 100 200 300 400 3.0 3.5 4.0 4.5 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 0.1 1 10 100 10 100 1000 10000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 10 20 30 40 50 60 0 2 4 6 8 10 *note: i d = 100a v ds = 20v v ds = 50v v ds = 80v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDP045N10A_f102 / fdi045n10a_f102 n-channel powertr ench ? mosfet FDP045N10A_f102 / fdi045n10a_f102 rev. a1 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. eoss vs. drain to sourece voltag e figure 12. unclamped ind uctive switching capability -100 -50 0 50 100 150 200 0.90 0.95 1.00 1.05 1.10 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 *notes: 1. v gs = 10v 2. i d = 100a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 v gs = 10v i d , drain current [a] t c , case temperature [ o c ] r jc = 0.57 o c/w 0.1 1 10 100 200 0.1 1 10 100 1000 10ms 30 s 100 s 1ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse dc 0 25 50 75 100 0 1 2 3 4 5 e oss , [ j ] v ds , drain to source voltage [ v ] 0.01 0.1 1 10 100 1000 1 10 50 if r = 0 t av = (l) ( i as ) / ( 1.3*rated bv dss -v dd ) if r = 0 t av = (l/r)in [( i as *r ) / ( 1.3*rated bv dss -v dd ) +1 ] starting t j = 25 o c starting t j = 150 o c i as , avalanche current [a] t av , time in avalanche [ms]
FDP045N10A_f102 / fdi045n10a_f102 n-channel powertr ench ? mosfet FDP045N10A_f102 / fdi045n10a_f102 rev. a1 www.fairchildsemi.com 5 typical performance characteristics (continued) figu re 13. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.001 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.57 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDP045N10A_f102 / fdi045n10a_f102 n-channel powertr ench ? mosfet FDP045N10A_f102 / fdi045n10a_f102 rev. a1 www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & wavef orms
FDP045N10A_f102 / fdi045n10a_f102 n-channel powertr ench ? mosfet FDP045N10A_f102 / fdi045n10a_f102 rev. a1 www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDP045N10A_f102 / fdi045n10a_f102 n-channel powertr ench ? mosfet FDP045N10A_f102 / fdi045n10a_f102 rev. a1 www.fairchildsemi.com 8 package dimensions dimensions in millimeters to-220
FDP045N10A_f102 / fdi045n10a_f102 n-channel powertr ench ? mosfet FDP045N10A_f102 / fdi045n10a_f102 rev. a1 www.fairchildsemi.com 9 package dimensions i2pak
FDP045N10A_f102 / fdi045n10a_f102 n-channel powertr ench ? mosfet FDP045N10A_f102 / fdi045n10a_f102 rev. a1 www.fairchildsemi.com 10 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild se miconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such t rademarks. *trademarks of system general corporation, used un der license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products here in to improve reliability, function, or design. fairchild does no t assume any liability arising out of the applicati on or use of any product or circuit described herein; neither does i t convey any license under its patent rights, nor t he rights of others. these specifications do not expand the terms of fai rchilds worldwide terms and conditions, specifical ly the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or syst ems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the u ser. 2. a critical component in any component of a life s upport, device, or system whose failure to perform can be reasonably e xpected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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uhc ? ultra frfet? unifet? vcx? visualmax? xs? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for pr oduct development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference infor mation only. anti-counterfeiting policy fairchild semiconductor corporations anti-counterf eiting policy. fairchilds anti-counterfeiting poli cy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semico nductor products are experiencing counterfeiting of their parts. customers who inadvertently purchase c ounterfeit parts experience many problems such as l oss of brand reputation, substandard performance, failed application, and increased cost of productio n and manufacturing delays. fairchild is taking str ong measures to protect ourselves and our customers from the proliferation of counterfeit parts. fairch ild strongly encourages customers to purchase fairc hild parts either directly from fairchild or from a uthorized fairchild distributors who are listed by country on our web page cited above. products customers buy e ither from fairchild directly or from authorized fa irchild distributors are genuine parts, have full traceabil ity, meet fairchilds quality standards for handing and storage and provide access to fairchilds full range of up-to-date technical and product information. fairc hild and our authorized distributors will stand beh ind all warranties and will appropriately address a nd warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance f or parts bought from unauthorized sources. fairchil d is committed to combat this global problem and encoura ge our customers to do their part in stopping this practice by buying direct or from authorized distri butors. rev. i55
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